A technology simulation methodology for AC-performance optimization of SiGe HBTs

Author

Johnson, J.B. ; Stricker, A. ; Joseph, A.J. ; Slinkman, J.A.

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe BiCMOS HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation capability is demonstrated for critical HBT AC device characteristics through comparison with experimental devices.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF bipolar transistors; UHF integrated circuits; calibration; heterojunction bipolar transistors; integrated circuit modelling; microwave bipolar transistors; semiconductor device models; semiconductor materials; semiconductor process modelling; 100 to 200 GHz; AC performance optimization; HBT AC device characteristics; SiGe; SiGe BiCMOS HBTs; SiGe HBT device simulation; SiGe HBT process simulation; predictive simulation capability; technology simulation methodology; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Calibration; Germanium silicon alloys; Heterojunction bipolar transistors; Optimization methods; Predictive models; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979552

Filename

979552