Title :
A technology simulation methodology for AC-performance optimization of SiGe HBTs
Author :
Johnson, J.B. ; Stricker, A. ; Joseph, A.J. ; Slinkman, J.A.
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT, USA
Abstract :
A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe BiCMOS HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation capability is demonstrated for critical HBT AC device characteristics through comparison with experimental devices.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF bipolar transistors; UHF integrated circuits; calibration; heterojunction bipolar transistors; integrated circuit modelling; microwave bipolar transistors; semiconductor device models; semiconductor materials; semiconductor process modelling; 100 to 200 GHz; AC performance optimization; HBT AC device characteristics; SiGe; SiGe BiCMOS HBTs; SiGe HBT device simulation; SiGe HBT process simulation; predictive simulation capability; technology simulation methodology; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Calibration; Germanium silicon alloys; Heterojunction bipolar transistors; Optimization methods; Predictive models; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979552
