A new high efficiency CMOS voltage doubler

Author

Favrat, Pierre ; Deval, Philippe ; Declercq, Michel J.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1997

fDate

5-8 May 1997

Firstpage

259

Lastpage

262

Abstract

A charge pump cell is used to make a voltage doubler using improved serial switches. The PMOS transistor used for the serial switch is analyzed and a model suitable for simulation is described. The importance of capacitors is shown with plots of efficiency versus load and stray capacitance. Several problems arising at low voltage or high frequency are developed and some optimizations are presented. The substrate current is totally suppressed by the technique of bulk commutation. An efficiency of 94% has been reached using external capacitors

Keywords

CMOS analogue integrated circuits; circuit optimisation; commutation; equivalent circuits; field effect transistor switches; semiconductor device models; voltage multipliers; 94 percent; CMOS voltage doubler; PMOS transistor; PMOSFET switch; bulk commutation; capacitors; charge pump cell; high efficiency voltage doubler; optimizations; serial switches; simulation model; stray capacitance; substrate current suppression; CMOS technology; Capacitors; Charge pumps; Circuits; Design engineering; Frequency; Low voltage; MOSFETs; SPICE; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606625

Filename

606625