DocumentCode
2166849
Title
A 16-24 GHz CMOS SOI LNA with 2.2 dB Mean Noise Figure
Author
Kanar, Tumay ; Rebeiz, Gabriel M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
This paper presents a K-band low-noise amplifier (LNA) with a measured mean noise figure of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) CMOS process. The measured S-parameters result a peak gain of 19.5 dB at 20 GHz and S11 <; -10 dB at 16-24 GHz. The design shows that CMOS SOI process can provide a comparable noise performance with GaAs and SiGe devices. To the best of authors´ knowledge, this LNA achieves the lowest noise figure at K-band in any CMOS process.
Keywords
CMOS analogue integrated circuits; S-parameters; low noise amplifiers; semiconductor-insulator boundaries; K-band low-noise amplifier; S-parameter; SOI CMOS process; frequency 16 GHz to 24 GHz; frequency 20 GHz; gain 19.5 dB; mean noise figure; noise figure 2.2 dB; semiconductor-on-insulator; size 45 nm; CMOS integrated circuits; CMOS technology; Gain; Noise; Noise measurement; Silicon germanium; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659186
Filename
6659186
Link To Document