Title :
A 180mW InP HBT Power Amplifier MMIC at 214 GHz
Author :
Reed, Thomas B. ; Griffith, Zach ; Rowell, Petra ; Field, Mark ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
A solid state power amplifier MMIC is demonstrated with 180mW of saturated output power at 214GHz, from an unthinned die, and a small signal S21 gain of 22.0dB. 3-dB bandwidth extends from below 210GHz to 230GHz. PDC is 12.9W. PA Cell design uses a 250nm InP HBT process and a novel three-port tuning network. Three levels of on-wafer power combining in 5μm BCB microstrip are used to combine 16 PA cells in a power amplifier MMIC. The result is a 4x increase in output periphery versus the previous state-of-the-art for InP HBT power amplifier MMICs designed for 220GHz.
Keywords :
MMIC power amplifiers; heterojunction bipolar transistors; power combiners; BCB microstrip; HBT power amplifier MMIC; InP; PA cell design; PDC; frequency 214 GHz; gain 22 dB; on-wafer power combining; output periphery; power 12.9 W; power 180 mW; saturated output power; size 250 nm; solid state power amplifier MMIC; three-port tuning network; unthinned die; Heterojunction bipolar transistors; Impedance; Indium phosphide; MMICs; Power amplifiers; Power generation; Radio frequency;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659187
