Title :
Electronic properties of the SiC-SiO2 interface and related systems
Author :
Ouisse, Thieny ; Bano, Edwige
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
The properties of the SiC/SiO2 interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface and the oxide reliability is studied
Keywords :
defect states; electrical conductivity; interface states; inversion layers; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; SiC-SiO2; SiC/SiO2 interface defects; electron transport; electronic properties; oxide reliability; silicon carbide inversion layer; thermally-activated conductivity; Aluminum; Consumer electronics; Electrons; Insulation; Interface states; MOS capacitors; Photonic band gap; Silicon carbide; Silicon compounds; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651559
