• DocumentCode
    2166925
  • Title

    Electronic properties of the SiC-SiO2 interface and related systems

  • Author

    Ouisse, Thieny ; Bano, Edwige

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    101
  • Abstract
    The properties of the SiC/SiO2 interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface and the oxide reliability is studied
  • Keywords
    defect states; electrical conductivity; interface states; inversion layers; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; SiC-SiO2; SiC/SiO2 interface defects; electron transport; electronic properties; oxide reliability; silicon carbide inversion layer; thermally-activated conductivity; Aluminum; Consumer electronics; Electrons; Insulation; Interface states; MOS capacitors; Photonic band gap; Silicon carbide; Silicon compounds; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651559
  • Filename
    651559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2166925