Title :
A 2×44Gb/s 110-GHz Wireless Transmitter with Direct Amplitude and Phase Modulation in 45-nm SOI CMOS
Author :
Balteanu, A. ; Shopov, S. ; Voinigescu, S.P.
Author_Institution :
ECE Dept., Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper investigates the maximum Baud rate and the scalability to the W-Band of the mm-wave IQ power-DAC transmitter architecture. A 45-nm SOI CMOS implementation achieves 44-Gbps BPSK and 88-Gbps BPSK+OOK modulation rates at 100-110 GHz with energy efficiency of 9.4 pJ/bit and output powers ranging from 8.6 to 11.7 dBm.
Keywords :
CMOS integrated circuits; amplitude shift keying; digital-analogue conversion; field effect MIMIC; modulators; phase modulation; phase shift keying; radio transmitters; silicon-on-insulator; BPSK+OOK modulation rates; SOI CMOS process; W-band; bit rate 44 Gbit/s; bit rate 88 Gbit/s; direct amplitude modulation; energy efficiency; frequency 100 GHz to 110 GHz; maximum baud rate; mm-wave IQ power-DAC transmitter architecture; phase modulation; size 45 nm; wireless transmitter; Binary phase shift keying; CMOS integrated circuits; Computer architecture; Frequency measurement; Optical transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659188
