Title :
Floating-gate CMOS analog memory cell array
Author :
Harrison, Reid R. ; Hasler, Paul ; Minch, Bradley A.
Author_Institution :
Comput. & Neural Syst. Program, California Inst. of Technol., Pasadena, CA, USA
fDate :
31 May-3 Jun 1998
Abstract :
The complexity of analog VLSI systems is often limited by the number of pins on a chip rather than by the die area. Currently, many analog parameters and biases are stored off chip. Moving parameter storage on chip could save pins and allow us to create complex programmable analog systems. In this paper, we present a design for an on-chip non-volatile analog memory cell that can be configured in addressable arrays and programmed easily. We use floating-gate MOS transistors to store charge, and we use the processes of tunneling and hot-electron injection to program values. We achieve greater than 13-bit precision with no crosstalk between memory cells
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; VLSI; analogue processing circuits; analogue storage; cellular arrays; hot carriers; mixed analogue-digital integrated circuits; tunnelling; CMOS analog memory cell array; addressable arrays; analog VLSI systems; charge storage; complex programmable analog systems; floating-gate CMOS memory cell; floating-gate MOS transistors; hot-electron injection; onchip nonvolatile memory cell; tunneling; Analog computers; Analog memory; CMOS technology; Nonvolatile memory; Pins; Potentiometers; Secondary generated hot electron injection; Tunneling; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706877
