Title :
A simple model of mobility transverse field dependence in MOS transistors: application to current unified analytical expressions
Author :
Rusu, A. ; Ionescu, A.M. ; Chovet, A. ; Steriu, D.
Author_Institution :
Electron. Dept, Politehnica Univ. of Bucharest, Romania
Abstract :
A new and simple model for the transverse field dependence of the channel carrier mobility is proposed and validated in bulk silicon n-MOSFETs. It is shown that the extraction of the associated parameters is fast and accurate, and the unified global current model presents good aptitudes for optimal parameter extraction
Keywords :
MOSFET; carrier mobility; semiconductor device models; MOS transistor; Si; bulk silicon n-MOSFET; channel carrier mobility; parameter extraction; transverse field dependence; unified global current model; Doping; Equations; MOSFET circuits; Minimization methods; Model driven engineering; Parameter extraction; Q measurement; Silicon; Threshold voltage; Transconductance;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651561
