Title :
A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm
Author :
Hsin-Chang Lin ; Rebeiz, Gabriel M.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
This paper presents a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author´s knowledge, this is the highest power wideband doubler at 200-250 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency multipliers; SiGe; SiGe BiCMOS frequency multiplier; balanced frequency doubler; conversion gain; frequency 200 GHz to 245 GHz; frequency 200 GHz to 250 GHz; frequency 224 GHz to 228 GHz; gain -15 dB; harmonic component; peak output power; reflector; size 90 nm; transistor; Gain; Harmonic analysis; Loss measurement; Power generation; Power measurement; Silicon germanium; Transistors;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659189
