DocumentCode
2167080
Title
High Power Ultra Compact VCO with Active Reactance Concepts at 24 GHz
Author
Sönmez, E. ; Trasser, A. ; Schad, K.-B. ; Abele, P. ; Schumacher, H.
Author_Institution
Dept. of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Germany. esoenmez@ebs.e-technik.uni-ulm.de
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
Extremely compact layout and circuit design techniques have been applied to commercially available Si/SiGe hetero bipolar transistor (HBT) MMIC technology. An ultra compact voltage controlled oscillator with a high output power has been realized, addressing the ISM band at 24 GHz. Active reactance concepts have made it possible to realize the layout of this MMIC on an ultra compact area of 300×300 ¿m. The voltage control has been provided by a voltage tunable active inductance. To reduce oscillator pushing, a cascode buffer has been added. An output power of +1 dBm at 24 GHz has been achieved.
Keywords
Bipolar transistors; Circuit synthesis; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Power generation; Silicon germanium; Tunable circuits and devices; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.339165
Filename
4140233
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