Title :
A numerical study of the RESURF effect in bulk and SOI power devices
Author :
Popescu, A. ; Udrea, F. ; Milne, W.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A numerical study of the two-dimensional distribution of the electric field in Junction Isolated (JI), Silicon on Insulator (SOI) and partial SOI power devices has been performed. The partial SOI lateral power devices, earlier proposed by us, overcome the breakdown problems associated with conventional SOI power devices, while still maintaining a high speed and low electrical interference with associated low voltage CMOS circuitry
Keywords :
power semiconductor devices; semiconductor device models; silicon-on-insulator; RESURF effect; SOI power device; breakdown; bulk power device; electric field; electrical interference; junction isolated power device; low voltage CMOS circuit; partial SOI lateral power device; speed; two-dimensional distribution; Breakdown voltage; CMOS technology; Cathodes; Circuits; Diodes; Doping; Epitaxial layers; Low voltage; Silicon on insulator technology; Substrates;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651563
