DocumentCode
2167081
Title
A numerical study of the RESURF effect in bulk and SOI power devices
Author
Popescu, A. ; Udrea, F. ; Milne, W.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
127
Abstract
A numerical study of the two-dimensional distribution of the electric field in Junction Isolated (JI), Silicon on Insulator (SOI) and partial SOI power devices has been performed. The partial SOI lateral power devices, earlier proposed by us, overcome the breakdown problems associated with conventional SOI power devices, while still maintaining a high speed and low electrical interference with associated low voltage CMOS circuitry
Keywords
power semiconductor devices; semiconductor device models; silicon-on-insulator; RESURF effect; SOI power device; breakdown; bulk power device; electric field; electrical interference; junction isolated power device; low voltage CMOS circuit; partial SOI lateral power device; speed; two-dimensional distribution; Breakdown voltage; CMOS technology; Cathodes; Circuits; Diodes; Doping; Epitaxial layers; Low voltage; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651563
Filename
651563
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