Title :
Interconnecting device opportunities for gigascale integration (GSI)
Author :
Meindl, J.D. ; Venkatesan, R. ; Davis, J.A. ; Joyner, J. ; Naeemi, A. ; Zarkesh-Ha, P. ; Bakir, M. ; Mule, T. ; Kohl, P.A. ; Martin, K.P.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In recent years interconnecting devices have become primary limits on the performance, energy dissipation, signal integrity, and productivity of gigascale integration (GSI). Opportunities to address the interconnect problem include new materials and processes, reverse scaling, novel microarchitectures, three-dimensional integration, input/output interconnect enhancements, RF wireless interconnects and microphotonics.
Keywords :
integrated circuit interconnections; RF wireless interconnect; energy dissipation; gigascale integration; interconnecting device; microarchitecture; microphotonics; reverse scaling; signal integrity; three-dimensional integration; Clocks; Delay; Dielectrics and electrical insulation; Displays; Energy dissipation; MOSFETs; Macrocell networks; Productivity; Transistors; Wiring;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979560
