DocumentCode :
2167146
Title :
RF-interconnect for future inter- and intra-ULSI communications
Author :
Chang, M.-C.F. ; Hyunchol Shin ; Liyang Zhang
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear :
2001
fDate :
2-5 Dec. 2001
Abstract :
Future ULSI interconnect system demands extremely high data rate (up to 100Gbps/channel or 20Tbps/chip) as well as multi-I/O service, re-configurable and fault-tolerant computing/processing architecture and total compatibility with the mainstream silicon CMOS and MCM technologies. In this paper, we present a novel RF-interconnect system that promises to meet all of those system needs. The intended "active" RF-interconnect is based on principles of near-field capacitive coupling, low-loss microwave signal transmission and modern multiple-access algorithms (such as CDMA and FDMA) for shared transmission medium. We will address issues relevant to RF-interconnect system design and discuss its advantages in speed, signal integrity and channel reconfiguration. As a proof of concept, we have realized on-chip 2/spl times/2 CDMA-interconnect system and FDMA/CDMA combined RF-interconnects in 0.18/spl mu/m CMOS with complete functions of signal coupling, transmission and channel reconfiguration at the clock speed of f/sub clk/=2.8GHz and 5GHz RF carrier.
Keywords :
CMOS integrated circuits; ULSI; code division multiple access; frequency division multiple access; integrated circuit interconnections; 0.18 micron; 100 Gbit/s; 2.8 GHz; 20 Tbit/s; 5 GHz; CDMA; CMOS technology; FDMA; active RF interconnect; channel reconfiguration; inter-ULSI communication; intra-ULSI communication; low-loss microwave signal transmission; multi-I/O service; multiple access algorithm; near-field capacitive coupling; signal integrity; CMOS process; CMOS technology; Computer architecture; Couplings; Fault tolerant systems; Frequency division multiaccess; Multiaccess communication; Silicon; System-on-a-chip; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
Type :
conf
DOI :
10.1109/IEDM.2001.979563
Filename :
979563
Link To Document :
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