Title :
Three terminal double barrier resonant tunneling devices with the base contact to the quantum well
Author :
Lepsa, M.I. ; van de Roer, Th G ; Kwaspen, J.J.M. ; Smalbrugge, E. ; van der Vleuten, W. ; Kaufmann, L.M.F.
Author_Institution :
COBRA Inst., Eindhoven Univ. of Technol., Netherlands
Abstract :
Three terminal (3T) Double Barrier Resonant Tunneling (DBRT) devices having the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The technological solution is based on high selective etching processes to reach the plane of the very thin quantum well on which, subsequently, a Schottky base contact is obtained using a nonalloyed Ti/Pt/Au metallization scheme. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigations on DBRT structures and suggest important applications in high-speed electronics
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; etching; gallium arsenide; metallisation; resonant tunnelling devices; semiconductor quantum wells; 3T-DBRT device; AC measurement; DC measurement; GaAs-AlAs; GaAs/AlAs material; Schottky base contact; Ti-Pt-Au; electrical characteristics; high-speed electronics; nonalloyed Ti/Pt/Au metallization; quantum well; selective etching; three terminal double barrier resonant tunneling device; Contacts; Current measurement; Electric variables; Electric variables measurement; Etching; Gallium arsenide; Gold; Metallization; Resonant tunneling devices; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651566
