DocumentCode
2167241
Title
A low dark current stacked CMOS-APS for charged particle imaging
Author
Takayanagi, I. ; Nakamura, J. ; Eid, E.-S. ; Fossum, E.R. ; Nagashima, K. ; Kunihiro, T. ; Yurimoto, H.
Author_Institution
Photobit Technol. Corp., Tokyo, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5/spl times/10/sup -8/ V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.
Keywords
CMOS image sensors; hot carriers; integrated circuit noise; leakage currents; nondestructive readout; semiconductor counters; charged particle imaging; dark current; hot carrier effect; leakage current; nondestructive readout CDS; p-MOS readout transistor; read noise; stacked CMOS active pixel sensor; twin well pixel; 1f noise; CMOS technology; Charge coupled devices; Dark current; Electrodes; Electrons; Hot carrier effects; Leakage current; Noise reduction; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979566
Filename
979566
Link To Document