DocumentCode :
2167242
Title :
Design, modeling and simulation methodology for source synchronous DDR memory subsystems
Author :
Pham, N. ; Cases, M. ; Bandyopadhyay, J.
Author_Institution :
IBM Corp., Austin, TX, USA
fYear :
2000
fDate :
2000
Firstpage :
267
Lastpage :
271
Abstract :
This paper describes the performance modeling and simulation methodology used to optimize the source synchronous timing equations for the system level interconnects. Actual double data rate (DDR) memory system configurations and timing specifications are used to describe the design methodology. The delay skew budget and noise margin allocation for the various components of the optimization equations are discussed in conjunction with their associated delay skew control techniques. This includes: Driver/receiver circuit design techniques, such as controlled driver´s impedance and edge rate and differential receivers; resistive termination schemes; board impedance and crosstalk controlled designs; etc. Finally, design guidelines are given for commercially available DDR SDRAMs designs using double pumped bus transfer rates
Keywords :
DRAM chips; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; DDR SDRAM DIMM; delay skew control; design optimization; noise margin; simulation model; source synchronous double data rate memory system; system level interconnect; timing; Circuit noise; Crosstalk; Delay; Design methodology; Driver circuits; Equations; Impedance; Integrated circuit interconnections; Optimization methods; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
Type :
conf
DOI :
10.1109/ECTC.2000.853161
Filename :
853161
Link To Document :
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