Title :
Variation of SRAM Alpha-Induced Soft Error Rate with Technology Node
Author :
Leroy, Damien ; Gaillard, Remi ; Schaefer, Erwin ; Beltrando, Cyrille ; Wen, Shi-Jie ; Wong, Richard
Author_Institution :
iRoC Technol., Grenoble
Abstract :
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
Keywords :
SRAM chips; radiation hardening (electronics); SRAM alpha-induced soft error rate; SRAM memories; alpha particles; iRoC technologies; size 180 nm to 65 nm; Alpha particles; Error analysis; Integrated circuit modeling; Integrated circuit synthesis; Integrated circuit technology; Performance evaluation; Random access memory; Semiconductor device manufacture; Shape; System testing; SER; SRAM; alpha; technology node; variation;
Conference_Titel :
On-Line Testing Symposium, 2008. IOLTS '08. 14th IEEE International
Conference_Location :
Rhodes
Print_ISBN :
978-0-7695-3264-6
DOI :
10.1109/IOLTS.2008.38
