Title :
The most resistive model for the MOS resistive circuit
Author :
Osa, J.I. ; Porta, S. ; Carlosena, A.
Author_Institution :
Dept. Ingenieria Electrica y Electron., Univ. Publica de Navarra, Pamplona, Spain
fDate :
31 May-3 Jun 1998
Abstract :
Significant departures between predicted behaviour and actual performance are observed in opamp based structures containing the so called MOS resistive circuit. In this paper we demonstrate that the usual description of this cell by a simple model of two tunable resistors is not adequate enough to properly shape the MRC operation. A more complete, though still simple model is proposed and shown to work through some examples
Keywords :
MOS analogue integrated circuits; active networks; frequency response; integrated circuit modelling; integrated circuit noise; operational amplifiers; MOS resistive circuit; opamp based structures; resistive model; Differential amplifiers; Joining processes; MOSFET circuits; Operational amplifiers; Predictive models; Prototypes; Resistors; Transconductors; Tunable circuits and devices; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706878
