Title :
Processing technologies for SiC
Author :
Constantinidis, G.
Author_Institution :
Microelectron. Res. Group, Found. for Res. & Technol. Hellas, Crete, Greece
Abstract :
Processing steps such as polishing, thermal oxidation, ion implantation, ohmic contacts, Schottky contacts and patterning are key issues for the successful fabrication of SiC-power devices and high temperature devices. This paper reviews contact fabrication and patterning with the emphasis on reactive ion etching
Keywords :
Schottky barriers; ion implantation; ohmic contacts; oxidation; polishing; semiconductor materials; silicon compounds; sputter etching; surface states; work function; Schottky contacts; SiC; contact fabrication; high temperature devices; ion implantation; ohmic contacts; patterning; polishing; power devices; processing technologies; reactive ion etching; thermal oxidation; Chemicals; Chemistry; Electrons; Etching; Microelectronics; Ohmic contacts; Schottky barriers; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651571
