DocumentCode
2167298
Title
An integrated color pixel in 0.18/spl mu/m CMOS technology
Author
Catrysse, P. ; Wandell, B. ; El Gamal, A.
Author_Institution
Inf. Syst. Lab., Stanford Univ., CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A method for controlling photodetector wavelength responsivity via metal layer patterns is demonstrated in a standard 0.18/spl mu/m CMOS technology. Responsivities suitable for RGB integrated color pixels, peaking at 450nm, 575nm and 750nm, are measured. Over 100% uncovered area transmittances are measured. We discuss possible theoretical explanations for the observed high transmittance.
Keywords
CMOS image sensors; photodetectors; 0.18 micron; 450 nm; 575 nm; 750 nm; CMOS technology; RGB integrated color pixel; area transmittance; metal layer pattern; photodetector wavelength responsivity; Area measurement; CMOS image sensors; CMOS technology; Circuits; Color; Filters; Photodetectors; Photodiodes; Pixel; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979568
Filename
979568
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