A GaAs MMIC Single-Chip RF-MEMS Switched Tunable LNA

Author

Malmqvist, R. ; Samuelsson, C. ; Reyaz, S. ; Gustafsson, A. ; Seonho Seok ; Fryziel, M. ; Rolland, P.-A. ; Grandchamp, B. ; Baggen, R.

Author_Institution

Swedish Defence Res. Agency (FOI), Linkoping, Sweden

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a novel compact circuit design of an RF-MEMS frequency-agile LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The uncapped/BCB capped single-chip GaAs MEMS tunable LNA circuits which can be matched at different frequency bands (e.g at X-band and Ku-/K-band) present similar in-band gain, linearity and noise figure over 30-60% wide tuning ranges (the uncapped MEMS tunable LNA has an NF≤3 dB at 14-21 GHz with ≤0.6 dB higher NF at 9-13 GHz). The validated MMIC designs are first time realizations of uncapped/0-level packaged MEMS tunable (wide-band/narrow-band) LNAs in a GaAs foundry process.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; integrated circuit design; low noise amplifiers; microswitches; wafer level packaging; wideband amplifiers; BCB cap type; GaAs; K-band; Ku-band; MMIC design; MMIC process; MMIC single-chip RF-MEMS switched tunable LNA; RF-MEMS frequency-agile LNA; X-band; compact circuit design; frequency 14 GHz to 21 GHz; frequency 9 GHz to 13 GHz; frequency bands; gallium arsenide foundry process; in-band gain; linearity; narrow-band LNA; noise figure; uncapped MEMS tunable LNA; uncapped/BCB capped single-chip MEMS tunable LNA circuits; wafer-level package; wideband LNA; Gallium arsenide; MMICs; Micromechanical devices; Microswitches; Noise figure; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659199

Filename

6659199