Title :
Electrical properties of porous silicon stabilised by storage in ambient
Author :
Ciurea, M.L. ; Lazar, M. ; Lazanu, S. ; Pentia, E. ; Dragoi, V.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Abstract :
The electrical transport of stabilised porous silicon layers was investigated. The samples were stored in ambient for 1.5-2 years. A MIS-like C-V characteristic, a strong rectifying I-V curve and I-T dependence with two activation energies were obtained. Thermally stimulated depolarisation currents have an activation energy of 0.81-0.87 eV. The electrical properties are discussed in the frame of a quantum confinement model, keeping into account the surface component
Keywords :
electrical conductivity; elemental semiconductors; porous materials; semiconductor thin films; silicon; thermally stimulated currents; C-V characteristics; I-V curve; Si; activation energy; quantum confinement model; stabilised porous silicon layers; thermally stimulated depolarisation currents; Capacitance-voltage characteristics; Current-voltage characteristics; Dark current; Material storage; Optical films; Potential well; Semiconductor films; Silicon; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651575
