Title :
On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations
Author :
Gherasim-Vrinceanu, Cristina ; Craciun, G. ; Dafinei, A. ; Vasile, E. ; Flueraru, C.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers
Keywords :
anodisation; elemental semiconductors; etching; porosity; porous materials; scanning electron microscopy; silicon; Si; anodic etching; anodization; etch rate; macroporous silicon layers; pore size distribution; porosity; scanning electron microscopy; Etching; Ethanol; Morphology; Physics; Scanning electron microscopy; Semiconductor materials; Silicon; Solid state circuits; Statistical analysis; Temperature;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651576
