Optimum design of multi-finger SiGe HBT with non-uniform length for power application

Author

Ning, Hu ; Wan-rong, Zhang ; Dong-Yue, Jin ; Hong-Yun, Xie ; Lu, Huang ; Yi-Wen, Huang ; Pei, Shen ; Jia, Li ; Jun-Ning, Gan

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

1524

Lastpage

1527

Abstract

With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can operate at large current and has a higher power handling capability in power application.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; thermal stability; SiGe; heterojunction bipolar transistors; multifinger HBT; nonuniform emitter length structure; thermal stability; three-dimensional thermal-electrical model; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Resistors; Silicon germanium; Temperature distribution; Thermal conductivity; Thermal engineering; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on

Conference_Location

Kunming

Print_ISBN

978-1-4244-2192-3

Electronic_ISBN

978-1-4244-2193-0

Type

conf

DOI

10.1109/ISAPE.2008.4735522

Filename

4735522