Title :
Sol-gel deposition of SnO2 on porous silicon layers investigated by RBS method
Author :
Craciun, G. ; Buiu, O. ; Paszti, F. ; Cobianu, C. ; Savaniu, C. ; Vasile, E.
Author_Institution :
Nat. Res. & Dev. Inst. for Microtechnol., Bucharest, Romania
Abstract :
The pore walls of a columnar type porous silicon (PS) samples of different porosity were coated by SnO2 using the sol-gel technique. The as-anodised PS samples were characterized by Scanning Electron Microscopy (SEM) and SnO2/PS and SnO2/Si samples were characterized by Rutherford Backscattering Spectrometry (RBS). The Sn signal in RBS spectra revealed that the pores are completely filled with a good depth homogeneity. The influence of PS morphology on the tin oxide sol-gel deposition is discussed
Keywords :
Rutherford backscattering; porosity; scanning electron microscopy; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; RBS; SEM; Si; SnO2; SnO2 coatings; depth homogeneity; porous silicon layer substrate; sol-gel deposition; CMOS technology; Conductivity; Ethanol; Hafnium; Ion beams; Scanning electron microscopy; Scattering; Silicon; Surface morphology; Tin;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651577
