Title :
High-fill-factor, burst-frame-rate charge-coupled device
Author :
Reich, R.K. ; O´Mara, D.M. ; Young, D.J. ; Loomis, A.H. ; Rathman, D.D. ; Craig, D.M. ; Watson, S.A. ; Ulibarri, M.D. ; Kosicki, B.B.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
A 512/spl times/512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. The megahertz frame rates also required metal strapping of the polysilicon gate electrodes. Tested imagers have demonstrated multi-frame capture capability.
Keywords :
CCD image sensors; elemental semiconductors; sensitivity; silicon; 262144 pixel; 512 pixel; Si; back-illuminated CCDs; burst-frame-rate charge-coupled device; electronic shutter technology; megahertz rates; metal strapping; polysilicon gate electrodes; sensitivity; sequential image frames; Charge coupled devices; Degradation; Detectors; Electrodes; Laboratories; Optical imaging; Pixel; Solid state circuits; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979570
