DocumentCode
2167372
Title
High-fill-factor, burst-frame-rate charge-coupled device
Author
Reich, R.K. ; O´Mara, D.M. ; Young, D.J. ; Loomis, A.H. ; Rathman, D.D. ; Craig, D.M. ; Watson, S.A. ; Ulibarri, M.D. ; Kosicki, B.B.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A 512/spl times/512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. The megahertz frame rates also required metal strapping of the polysilicon gate electrodes. Tested imagers have demonstrated multi-frame capture capability.
Keywords
CCD image sensors; elemental semiconductors; sensitivity; silicon; 262144 pixel; 512 pixel; Si; back-illuminated CCDs; burst-frame-rate charge-coupled device; electronic shutter technology; megahertz rates; metal strapping; polysilicon gate electrodes; sensitivity; sequential image frames; Charge coupled devices; Degradation; Detectors; Electrodes; Laboratories; Optical imaging; Pixel; Solid state circuits; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979570
Filename
979570
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