Title :
A photoconduction study on porous silicon
Author :
Dafinei, A. ; Craciun, G. ; Flueraru, C. ; Sargentis, C. ; Niculescu, E.
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
Abstract :
The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM)
Keywords :
atomic force microscopy; dark conductivity; elemental semiconductors; energy gap; photoconductivity; porous materials; silicon; surface structure; AFM; Si; band-gap widening; bias voltage dependence; dark resistivity; photoconductivity; porous silicon; spectral response; surface morphology; visible light photosensitivity; Atomic force microscopy; Conductivity; Crystalline materials; Crystallization; Photoconducting materials; Photoconductivity; Photonic band gap; Silicon; Surface morphology; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651578
