Title :
Double donor impurity in a quantum structure
Author :
Niculescu, E.C. ; Cone, Gabriela ; Niculescu, A.
Author_Institution :
Bucharest Univ., Romania
Abstract :
The binding energy of a double donor at the center of a GaAs/AlGaAs quantum structure is calculated by a variational method. We have considered the two cases of positive donor center and neutral donor center. It is found that for the studied structures-square wells, parabolic wells, and quantum dots-the double donors have deep energy levels, strongly sensitive to the variation of the range of confinement
Keywords :
III-V semiconductors; aluminium compounds; deep levels; gallium arsenide; impurity states; semiconductor quantum dots; semiconductor quantum wells; GaAs-AlGaAs; deep energy levels; donor binding energy; double donor impurity; neutral donor center; parabolic wells; positive donor center; quantum dots; quantum wells; square wells; variational method; Conducting materials; Dielectric constant; Dielectric materials; Effective mass; Electrons; Gallium arsenide; Helium; Impurities; Photonic band gap; Stationary state;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651579
