Title :
High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire
Author :
Kumar, V. ; Lu, W. ; Khan, F.A. ; Schwindt, R. ; Kuliev, A. ; Yang, J. ; Khan, A.A. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Using ICP-RIE, recessed 0.15 /spl mu/m gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 0.15 /spl mu/m gate-length devices exhibited maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance. of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz. The f/sub T/ of 107 GHz is the highest reported value for similar gate-length GaN-based HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; sputter etching; wide band gap semiconductors; 0.15 micron; 107 GHz; 148 GHz; 402 mS/mm; AlGaN-GaN; AlGaN/GaN; ICP-RIE; drain current density; extrinsic transconductance; maximum frequency of oscillation; recessed gate HEMTs; unity gain cut-off frequency; Aluminum gallium nitride; Current density; Cutoff frequency; Electron mobility; Fabrication; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979571
