Title :
A Low Power Quad 25.78-Gbit/s 2.5 V Laser Diode Driver Using Shunt-Driving in 0.18 µm SiGe-BiCMOS
Author :
Moto, Akihiro ; Ikagawa, Tomoko ; Sato, Seiki ; Yamasaki, Yasuaki ; Onishi, Y. ; Tanaka, Kiyoshi
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan
Abstract :
We report on circuit design and measurement results of the newly developed quad 25.78-Gbit/s laser diode driver, fabricated by 0.18 μm SiGe-BiCMOS (ft/fmax =200/200 GHz). Power dissipation of the laser diode driver is only 40 mW/lane and 190 mW/lane including a laser bias current when the DFB laser is driven under 2.5 V supply. This IC is co-packaged with laser diodes in small size transmitter optical subassembly. We confirm excellent optical waveform, which is compliant with 100GBASE-LR4 optical eye specifications in IEEE802.ba.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; distributed feedback lasers; driver circuits; integrated circuit design; integrated optoelectronics; low-power electronics; optical transmitters; semiconductor lasers; 100GBASE-LR4 optical eye specifications; BiCMOS technology; DFB laser; IEEE802.ba; SiGe; bit rate 25.78 Gbit/s; circuit design; frequency 200 GHz; laser bias current; low power quad laser diode driver; power 190 mW; power 40 mW; shunt-driving; size 0.18 mum; small size transmitter optical subassembly; voltage 2.5 V; High-speed optical techniques; Integrated circuits; Integrated optics; Mathematical model; Optical device fabrication; Optical filters; Optical transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659201
