DocumentCode :
2167424
Title :
Novel GaN-based MOS HFETs with thermally oxidized gate insulator
Author :
Inoue, K. ; Ikeda, Y. ; Masato, H. ; Matsuno, T. ; Nishii, K.
Author_Institution :
Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fYear :
2001
fDate :
2-5 Dec. 2001
Abstract :
GaN-based MOS HFETs with gate oxides formed by direct thermal oxidation of AlGaN/GaN epi layers have been developed for the first time. The fabricated MOS HFETs have exhibited high breakdown voltages, low gate leakage currents and stable operation at high drain voltages. Although MOS HFET with an undoped channel showed a reduced maximum drain current of 400 mA/mm, higher drain currents up to 900 mA/mm has been obtained by adopting a doped-channel structure. The stable device operations at high drain voltages indicate that the trap density at the interface between the thermal oxide and epi layers will be low and the thermal oxide can be also used as a passivation film.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; interface states; leakage currents; oxidation; passivation; semiconductor device breakdown; semiconductor epitaxial layers; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN epilayer; MOS HFET; breakdown voltage; doped channel structure; drain current; gate insulator; gate leakage current; interface trap density; passivation film; thermal oxidation; Gallium nitride; HEMTs; Insulation; Leakage current; MODFETs; Passivation; Silicon carbide; Silicon compounds; Substrates; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
Type :
conf
DOI :
10.1109/IEDM.2001.979572
Filename :
979572
Link To Document :
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