DocumentCode :
2167459
Title :
Impurity states in a spherical quantum dot: Effect of central cell correction
Author :
Niculescu, Ecaterina C. ; Niculescu, Ana ; Dafinei, Adrian
Author_Institution :
Bucharest Univ., Romania
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
203
Abstract :
The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs/Ga1-xAlxAs quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied
Keywords :
III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; impurity states; semiconductor quantum dots; Coulomb potential; GaAs-GaAlAs; central cell correction; dot radius; effective-mass approximation; impurity states; shallow donor binding energy; spherical quantum dot; variational scheme; Electrons; Gallium arsenide; Photonic band gap; Physics; Quantum dots; Semiconductivity; Semiconductor impurities; Stationary state; US Department of Transportation; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651580
Filename :
651580
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2167459
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