Title :
Physico-chemical properties and electrophysical characteristics of niobium nitride-gallium arsenide heterostructures
Author :
Belyaev, A.A. ; Hotovy, I. ; Kashin, G.N. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Tkhorik, Yu.A. ; Venger, E.F.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
For niobium nitride-gallium arsenide heterostructures the effect of interaction between phases on the contact electrophysical characteristics was studied. If was found that the characteristics depended nonmonotonically on both nitrogen percentage in the working gas mixture and annealing temperature. This may be related to compositional and structural nonuniformities of the interface
Keywords :
Auger effect; III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; annealing; gallium arsenide; interface structure; niobium compounds; semiconductor-metal boundaries; AES; NbN-GaAs; Schottky contacts; annealing temperature; compositional nonuniformities; heterostructures; photoelectron spectra; structural nonuniformities; Chemicals; Chemistry; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Niobium compounds; Physics; Substrates; Surface morphology; Thermodynamics;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651581
