Title :
Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs
Author :
Zhang, N.-Q. ; Moran, B. ; DenBaars, S.P. ; Mishra, U.K. ; Wang, X.W. ; Ma, T.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
As a competitive candidate for power switching electronics, GaN has slightly wider bandgap, higher electric strength, and higher saturated velocity than SiC. An insulating-gate structure GaN HEMT with a breakdown voltage of 1.3 kV was fabricated with a specific on-resistance of 1.7 m/spl Omega/.cm/sup 2/. State-of-the-art power device figure of merit of V/sub BR//sup 2//R/sub on/= 9.94/spl times/10/sup 8/ [V/sup 2//spl middot//spl Omega//sup -1/ cm/sup -2/] was achieved on this device. Device analysis shows that the surface traps play a dominant role in breakdown voltage and switching speed. High switching speed was realized on the kilo-volts devices by adoption of double gate dielectrics.
Keywords :
III-V semiconductors; aluminium compounds; dielectric thin films; gallium compounds; insulated gate field effect transistors; power HEMT; power semiconductor switches; semiconductor device breakdown; surface states; wide band gap semiconductors; 1.3 kV; AlGaN-GaN; AlGaN/GaN HEMT; GaN power switching HEMTs; breakdown voltage; double gate dielectrics; high switching speed; insulating-gate structure GaN HEMT; kilo-volts devices; power device figure of merit; power switching electronics; saturated velocity; specific on-resistance; surface traps; switching speed; Electric breakdown; Electron traps; Gallium nitride; HEMTs; MODFETs; MOSFETs; Power semiconductor switches; Semiconductor materials; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979575
