The intrinsic pseudo-MOSFET technique

Author

Ionescu, A.M. ; Munteanu, D. ; Chovet, A. ; Rusu, A. ; Steriu, D.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

217

Abstract

In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the 2-point and the 4-point methods is also presented

Keywords

MOSFET; electrical resistivity; elemental semiconductors; silicon; silicon compounds; silicon-on-insulator; 2-point methods; 4-point methods; 4-point probe method; SOI wafer fabrication; SOI wafers; Si-SiO₂; electrical parameter determination; in situ electrical characterization; intrinsic pseudo-MOSFET electrical characterization method; intrinsic pseudo-MOSFET technique; material evaluation; Contact resistance; Current measurement; Electrical resistance measurement; Fabrication; Force measurement; MOSFET circuits; Probes; Q measurement; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651583

Filename

651583