Author :
Chen, C. ; Lin, T. ; Jung, J. ; Yabuoshi, N. ; Sasaki, Y. ; Komori, K. ; Hsueh Hao Shih ; Chao Min Liao ; Funabashi, M. ; Suzuki, N. ; Ishii, Y. ; Uchino, T. ; Nemoto, K. ; Yamamoto, H. ; Nishihara, S. ; Sasabe, S. ; Koike, A. ; Ikeda, S. ; Tsao, J.
Abstract :
In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.
Keywords :
SRAM chips; integrated circuit reliability; integrated circuit yield; low-power electronics; 300 mm; cycle time; reliability; semiconductor fab manufacturing; single wafer technology; single-polysilicon triple-metal 8M/4M low-power SRAM; yield; Annealing; Chaos; Chemical vapor deposition; Cleaning; Costs; Electronics industry; Manufacturing processes; Random access memory; Technological innovation; Temperature;
