Title :
Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550°C
Author :
Cobianu, C. ; Cosmin, P. ; Modreanu, M. ; Dascalu, D. ; Holleman, J.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH4 at low temperatures in the range of 500-550°C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition
Keywords :
chemical vapour deposition; elemental semiconductors; reaction kinetics theory; reaction rate constants; semiconductor growth; semiconductor thin films; silicon; surface chemistry; 20 to 100 Pa; 500 to 550 C; 6 to 60 mm; LPCVD; LPCVD silicon films; Si; SiH4; film deposition; gas phase reactions; growth rate; kinetic constants; low pressure chemical vapor deposition; plug flow model; surface reactions; undoped silicon films; Hydrogen; Inductors; Kinetic theory; Plugs; Polymer films; Radio access networks; Semiconductor device modeling; Semiconductor films; Silicon; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651587
