Title :
Tapered windows in silicon dioxide layers for masking and passivation: obtaining and characterization methods
Author :
Negreanu, Mircea ; Gavrila, Raluca ; Dinescu, Adrian
Author_Institution :
Nat. Res. & Dev. Inst. for Microtechnol., Bucharest, Romania
Abstract :
Tapered windows in silicon dioxide layers were obtained by three different procedures, all involving the formation of a faster etching thin oxide layer on the top of the main masking layer. Slope angles for each case were estimated by several methods and the results compared and commented on
Keywords :
masks; passivation; photoresists; silicon compounds; sputter etching; SiO2; faster etching thin oxide layer; masking; masking layer; passivation; silicon dioxide layers; tapered windows; Etching; Goniometers; Hafnium; Human computer interaction; Interference; Measurement standards; Resists; Shape; Silicon compounds; Thickness control;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651589
