• DocumentCode
    2167720
  • Title

    SnO2 sol-gel derived films doped with platinum and antimony

  • Author

    Savaniu, C. ; Arnautu, A. ; Cobianu, C. ; Zaharescu, M. ; Parlog, C. ; van den Berg, A.

  • Author_Institution
    Nat. Inst. of Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    251
  • Abstract
    SnO2 sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M
  • Keywords
    antimony; platinum; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; Si; SnO2 sol-gel derived films; SnO2 sol-gel derived thin films; SnO2:Pt; SnO2:Sb; antimony; antimony doping; platinum; platinum addition; porous silicon substrate; transparent crack-free layers; Annealing; Atomic force microscopy; Platinum; Semiconductor thin films; Silicon; Substrates; Surface morphology; Temperature; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651591
  • Filename
    651591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2167720