Title :
SnO2 sol-gel derived films doped with platinum and antimony
Author :
Savaniu, C. ; Arnautu, A. ; Cobianu, C. ; Zaharescu, M. ; Parlog, C. ; van den Berg, A.
Author_Institution :
Nat. Inst. of Microtechnol., Bucharest, Romania
Abstract :
SnO2 sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M
Keywords :
antimony; platinum; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; Si; SnO2 sol-gel derived films; SnO2 sol-gel derived thin films; SnO2:Pt; SnO2:Sb; antimony; antimony doping; platinum; platinum addition; porous silicon substrate; transparent crack-free layers; Annealing; Atomic force microscopy; Platinum; Semiconductor thin films; Silicon; Substrates; Surface morphology; Temperature; Thermal stability; Tin;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651591
