DocumentCode
2167745
Title
A comparative study of SOI inverter circuits for low-voltage and low-power applications
Author
Jin, Wei ; Chan, Philip C.H.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
fYear
1997
fDate
6-9 Oct 1997
Firstpage
112
Lastpage
113
Abstract
Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation
Keywords
MOS logic circuits; circuit analysis computing; logic gates; silicon-on-insulator; MEDICI simulation; SOI MOSFET; inverter circuit; low-voltage low-power application; Circuit simulation; Delay; Diodes; Inverters; MOS devices; Medical simulation; Power dissipation; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location
Fish Camp, CA
ISSN
1078-621X
Print_ISBN
0-7803-3938-X
Type
conf
DOI
10.1109/SOI.1997.634958
Filename
634958
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