Title :
A comparative study of SOI inverter circuits for low-voltage and low-power applications
Author :
Jin, Wei ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation
Keywords :
MOS logic circuits; circuit analysis computing; logic gates; silicon-on-insulator; MEDICI simulation; SOI MOSFET; inverter circuit; low-voltage low-power application; Circuit simulation; Delay; Diodes; Inverters; MOS devices; Medical simulation; Power dissipation; Virtual manufacturing; Voltage;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634958
