Title :
Frequency Dependence of HEMT Under Optical Illumination
Author :
Yajian, Huang ; Alphones, Arokiaswami
Author_Institution :
Department of Electrical Engineering, National University of Singapore, Singapore, 119260
Abstract :
An analysis of the AC characteristics of Al-GaAs/GaAs HEMT under illumination with modulated light has been carried out for small signal condition. A new model for the photovoltage calculation is outlined. The effect of the signal frequency on the photoconductive current is evaluated, the results show that photoconductive current is very small and can be neglected in calculation. The frequency dependence of photovoltage along with 2-DEG charge density, drain-source current and transconductance of the device have been studied analytically for HEMT structure.
Keywords :
Frequency dependence; Gallium arsenide; HEMTs; High speed optical techniques; Lighting; Optical mixing; Optical modulation; Optical surface waves; Photoconductivity; Photovoltaic effects;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.339189
