Title :
An Efficiency and Size Optimized 2GHz 25W Cascaded Doherty RF Power Amplifiers Using GAN HEMTs
Author :
Murao, Yoji ; Ohgami, Kazuya ; Kaneko, Tetsuya
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
NEC has developed a 2.1GHz band very compact and high efficiency power amplifier module based on GaN HEMT cascaded Doherty circuitry. Implemented modules exhibits the amplifier chain power added efficiency of 45% and the final stage drain efficiency of 58% at 25W output level with associated gain of 44dB. The module works well with DPD to achieve -51dBc ACLR using an LTE E-TM1.1 signal with the peak-to-average-power-ratio of 7.1dB. The module occupies only 99cm2. Compact driver stage Doherty circuitry implemented on the multi-layer composite materials PCB contributes both to efficiency enhancement and shrunk foot print.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; Doherty RF power amplifiers; GaN; HEMT circuit; LTE E-TM1.1 signal; PCB; bandwidth 2.1 GHz; cascaded Doherty circuitry; compact driver stage Doherty circuitry; gain 44 dB; multilayer composite material; peak to average power ratio; power 25 W; power added efficiency; size 99 cm; stage drain efficiency; Copper; Gain; Gallium nitride; HEMTs; MODFETs; Nonhomogeneous media; Power amplifiers;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659215
