Title :
Interfacial degradation of epoxy-coated silicon nitride
Author :
Park, Jongwoo ; Harlow, D.G.
Author_Institution :
Optoelectron. Center, Lucent Technol., Breinigsville, PA, USA
Abstract :
A silicon (Si) wafer passivated with a nitride film, fabricated by low-pressure chemical vapor deposition, and coated with epoxy was used as a test specimen to characterized the interfacial degradation. The highly accelerated stress test (HAST) conditions were 121°C and unsaturated 100% relative humidity. Optical microscopy was used to monitor the growth of damage as a function of time. Results of electron microscopy and X-ray photoelectron spectrometry (XPS) indicate that two different failure modes exist at the interface
Keywords :
CVD coatings; passivation; polymer films; silicon compounds; 121 C; SiN; X-ray photoelectron spectrometry; electron microscopy; epoxy coating; failure mode; highly accelerated stress test; interfacial degradation; low-pressure chemical vapor deposition; optical microscopy; silicon nitride passivation film; silicon wafer; Chemical vapor deposition; Degradation; Humidity; Life estimation; Optical films; Optical microscopy; Semiconductor films; Silicon; Stress; Testing;
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
DOI :
10.1109/ECTC.2000.853184
