DocumentCode
2167795
Title
An LC VCO for High Power Millimeter-Wave Signal Generation
Author
Szhau Lai ; Kuylenstierna, Dan ; Kozhuharov, Rumen ; Hansson, B. ; Zirath, Herbert
Author_Institution
GigaHertz Center, Chalmers Univ. of Technol., Gothenburg, Sweden
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors´ knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.
Keywords
III-V semiconductors; harmonic generation; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; G band second harmonic VCO; InP; InP DHBT technology; LC VCO; capacitive emitter degeneration; cross-coupled topology; current 46 mA; frequency 169 GHz to 176 GHz; high power millimeter-wave signal generation; peak second harmonic signal; size 0.25 micron; voltage 4 V; Harmonic analysis; Power generation; Topology; Transistors; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659216
Filename
6659216
Link To Document