Title :
Sulfur passivation for photosensitivity control of detectors with corrugated metal-III-V semiconductor interface
Author :
Dmitruk, N.L. ; Mayeva, O.I. ; Mamikin, S.V. ; Yastrubchak, O.B.
Author_Institution :
Inst. for Phys. of Semicond., Acad. of Sci., Kyiv, Ukraine
Abstract :
We report on a sulfur based surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity are used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in the surface plasmon polariton excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating
Keywords :
III-V semiconductors; Schottky diodes; metal-semiconductor-metal structures; passivation; photodetectors; polaritons; sulphur; surface plasmons; 3 y; MSM detectors; S; Schottky diodes; corrugated interface; corrugated metal-III-V semiconductor interface; detectors; dielectric coating; diodes; photodetectors; photosensitivity control; polarization characteristics; spectral characteristics; sulfur based surface passivation method; sulfur passivation; surface plasmon polariton excitation regime; visible spectrum; Corrugated surfaces; Detectors; Dielectrics; Diodes; Monitoring; Passivation; Photodetectors; Plasmons; Polarization; Surface treatment;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651594
