• DocumentCode
    2167834
  • Title

    Photovaricaps on ZnIn2S4 and CdGaInS4

  • Author

    Radautsan, S. ; Arama, E. ; Zhitar, V. ; Moldovyan, N.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Chishinau, Moldova
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    267
  • Abstract
    The paper presents the results of investigation of photovaricaps based on Pt-ZnIn2S4 (CdGaInS4) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (103 Hz) photovaricaps having a super position coefficient of capacity (4-20) and the quality factor (10-60) have been defined
  • Keywords
    Q-factor; cadmium compounds; gallium compounds; indium compounds; photocapacitance; photodiodes; platinum; ternary semiconductors; varactors; zinc compounds; 1E3 Hz; CdGaInS4; Pt-CdGaInS4; Pt-ZnIn2S4; ZnIn2S4; impurity band; photovaricaps; position coefficient; quality factor; spectral region; Absorption; Conductivity; Crystals; Impurities; Lighting; Ohmic contacts; P-n junctions; Physics; Q factor; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651595
  • Filename
    651595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2167834