A new analytical method for modeling selective epitaxial growth

Author

Mircea, Andrei ; Manolescu, Anton ; Manolescu, Anca Manuela

Author_Institution

Lab. de Bagneux, CNET, Bagneux, France

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

275

Abstract

The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed

Keywords

III-V semiconductors; Laplace equations; epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; GaAs; InP; Laplace equation; RSIM; analytical method; approximate solution; computing time; modeling; reduced surface interaction model; selective area epitaxy; selective epitaxial growth; special boundary conditions; standard finite difference technique; two dimensions; Analytical models; Boundary conditions; Epitaxial growth; Geometry; Indium phosphide; Laplace equations; Optical surface waves; Semiconductor process modeling; Substrates; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651597

Filename

651597