Title :
A new analytical method for modeling selective epitaxial growth
Author :
Mircea, Andrei ; Manolescu, Anton ; Manolescu, Anca Manuela
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed
Keywords :
III-V semiconductors; Laplace equations; epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; GaAs; InP; Laplace equation; RSIM; analytical method; approximate solution; computing time; modeling; reduced surface interaction model; selective area epitaxy; selective epitaxial growth; special boundary conditions; standard finite difference technique; two dimensions; Analytical models; Boundary conditions; Epitaxial growth; Geometry; Indium phosphide; Laplace equations; Optical surface waves; Semiconductor process modeling; Substrates; Telecommunications;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651597
