Zinc diffusion from a reactively sputtered glass source in GaAs

Author

Jishiashvili, David ; Shiolashvili, Zeinab ; Dzanelidze, Rusudan ; Mosidze, Leila

Author_Institution

Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

279

Abstract

A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700°C. The developed original technology simplifies the diffusion process, allows to the perform doping procedure in open tubes and inert atmospheres without encapsulation. The surface concentration can be regulated in the wide range from 10¹⁶ to 10²⁰ cm^-3

Keywords

III-V semiconductors; diffusion; doping profiles; gallium arsenide; semiconductor doping; surface structure; zinc; 470 to 700 C; GaAs; GaAs:Zn; Zn diffusion; doping procedure; inert atmospheres; low temperature reactive ion-plasma sputtering technique; open tubes; reactively sputtered glass source; surface concentration; zinc diffusion source; zinc silicate glass; Annealing; Etching; Gallium arsenide; Glass; Ion implantation; Plasma temperature; Semiconductor device doping; Semiconductor films; Sputtering; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651598

Filename

651598