Title :
Cooling Limits for GaN HEMT Technology
Author :
Yoonjin Won ; Jungwan Cho ; Agonafer, Damena ; Asheghi, Mehdi ; Goodson, Kenneth E.
Author_Institution :
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.
Keywords :
III-V semiconductors; convection; cooling; gallium compounds; high electron mobility transistors; thermal management (packaging); thermal resistance; wide band gap semiconductors; GaN; HEMT technology; diamond composite; extreme flux convection; fundamental cooling limit; gate width; nanoengineered heat sink; near-junction thermal resistance; power density; thermal management technology; time 5 year; Cooling; Diamonds; Gallium nitride; Heat transfer; Heating; Thermal resistance;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659222
