DocumentCode
2167915
Title
Cooling Limits for GaN HEMT Technology
Author
Yoonjin Won ; Jungwan Cho ; Agonafer, Damena ; Asheghi, Mehdi ; Goodson, Kenneth E.
Author_Institution
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
5
Abstract
The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.
Keywords
III-V semiconductors; convection; cooling; gallium compounds; high electron mobility transistors; thermal management (packaging); thermal resistance; wide band gap semiconductors; GaN; HEMT technology; diamond composite; extreme flux convection; fundamental cooling limit; gate width; nanoengineered heat sink; near-junction thermal resistance; power density; thermal management technology; time 5 year; Cooling; Diamonds; Gallium nitride; Heat transfer; Heating; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659222
Filename
6659222
Link To Document