Title :
Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance
Author :
Cho, H.-J. ; Kang, C.S. ; Onishi, K. ; Gopalan, S. ; Nieh, R. ; Choi, R. ; Dharmarajan, E. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A novel technique to tailor the nitrogen profile in HfO/sub 2/ gate dielectric has been developed. Nitrogen was incorporated in the upper layer of HfO/sub 2/ using a reactive sputtering method, followed by a reoxidation anneal. The resulting dielectrics showed good thermal stability, boron penetration suppression, low interfacial trap density, plus lower hysteresis and improved MOSFET characteristics, in comparison to both non-nitrided and bottom nitrided (via Si-surface nitridation with NH/sub 3/) devices.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; interface states; nitrogen; oxidation; rapid thermal annealing; silicon; sputter deposition; tantalum compounds; thermal stability; HfO/sub 2/ gate dielectric; HfO/sub 2/:N; MOS capacitors; MOSFET characteristics; N profile engineering; TaN-HfO/sub 2/-Si; TaN/HfO/sub 2//Si MOSFET performance; boron penetration suppression; gate dielectrics; hysteresis; low interfacial trap density; reactive sputtering method; reoxidation anneal; thermal stability; Annealing; Boron; Dielectric devices; Dielectric substrates; Hafnium oxide; MOSFET circuits; Nitrogen; Sputtering; Temperature; Thermal engineering;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979593
